| DEVICEDATASHEET |
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DEVICE INTRODUCTION: |
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Device Name |
High Voltage Silicon Diode |
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Device Type |
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Simple Data |
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Substitute Type |
-- |
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Environmental Protection |
RoHS / SGS |
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Manufacturer |
HVGT Semiconductor |
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Net Weight |
2.60 gram (approx) |
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MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) |
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Items |
Symbols |
Condition |
Data Value |
Units |
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Repetitive Peak Renerse Voltage |
VRRM |
TA=25°C |
7200 |
V |
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Non-Repetitive Peak Renerse Voltage |
VRSM |
TA=25°C |
8000 |
V |
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Average Forward Current Maximum |
IFANM |
TA=110°C; Resistive Load |
300 |
mA |
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Average Forward Current Maximum |
IFAVM |
TOIL=110°C |
480 |
mA |
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Non-Repetitive Forward Surge Current |
IFSM |
TA=25°C; 60Hz Half-Sine Wave; 8.3mS |
15 |
A |
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Junction Temperature |
TJ |
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125 |
°C |
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Allowable Operation Case Temperature |
TC |
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-40~+125 |
°C |
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Storage Temperature |
TSTG |
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-55~+150 |
°C |
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ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified) |
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Items |
Symbols |
Condition |
Data value |
Units |
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Maximum Forward Voltage Drop |
VFM |
at 25°C; at IFAVM |
16 |
V |
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Maximum Reverse Current |
IR1 |
at 25°C; at VRRM |
10 |
uA |
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Maximum Reverse Current |
IR2 |
at 100°C; at VRRM |
100 |
uA |
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Maximum Reverse Recovery Time |
TRR |
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR |
150 |
nS |
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Reverse Breakdown Voltage |
VAV |
at 25°C; IR=100uA |
≥8.0 |
kV |
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PACKAGE SIZE:(Unit:mm) |
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HVGT Name: |
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