DEVICEDATASHEET

 DEVICE INTRODUCTION:

 Device Name

 High Voltage Silicon Rectifier Diode

 Device Type

 ESJC30-08     (300mA  7.2kV  150nS)

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT

 Net Weight

 2.10 gram (approx)

 

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltage

VRRM

TA=25°C

7200

V

 Non-Repetitive Peak Renerse Voltage

VRSM

TA=25°C

8000

V

 Average Forward Current Maximum

IFANM

TA=110°C; Resistive Load

300

mA

 Average Forward Current Maximum

IFAVM

TOIL=110°C

--

mA

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 50Hz Half-Sine Wave; 8.3mS

15

A

 Junction Temperature

TJ

 

125

°C

 Allowable Operation Case Temperature

TC

 

-40~+125

°C

 Storage Temperature

TSTG

 

-40~+150

°C

 

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

16

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

10

uA

 Maximum Reverse Current

IR2

at 100°C; at VRRM

100

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

150

nS

 Reverse Breakdown Voltage

VAV

at 25°C; IR=100uA

≥8.0

kV

 

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-721

 

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