DEVICE INTRODUCTION:

 Device Name

 Surface Mounted Silicon Carbide Ultra Fast Recovery High Voltage Rectifier Diode

 Device Type

 SC20U02B(AJ202K)

 Simple Data

 2.0A  2.0kV   20nS

 Substitute Type

 AJ202K

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 0.095 gram (approx)

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Maximum Repetitive Reverse Voltage

VRRM

TA=25°C

2000

V

 Max.Working Peak Reverse Voltage

VRWM

TA=25°C

2000

V

 Max.DC Blocking Voltage

VDC

TA=25°C

2000

V

 RMS Reverse Voltage

VRMS

TA=25°C

1400

V

 Maximum Average Forward Current  

IFAVM

TL=125°C

2.0

A

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C;60Hz Half-Sine Wave; 8.3mS

80

A

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Square Wave; 1.0mS

100

A

 Maximum Junction Temperature

TJ

175

°C

 Allowable Operation Case Temperature

TC

-55~+175

°C

 Storage Temperature

TSTG

-65~+200

°C

 Current Squared Time 

I2t

1.0mS ≤ t ≤ 8.3mS

10.375

A2s

 Thermal Resistance from Junction (To Lead)

Rth(J-L)

Mounted on P.C.B. with 8mm*8mm copper pad areas.

20

°C/W

 Thermal Resistance from Junction (To Ambient)

Rth(J-A)

Mounted on P.C.B. with 8mm*8mm copper pad areas.

75

°C/W

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

2.4

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

0.5

uA

 Maximum Reverse Current

IR2

at 125°C; at VRRM

20

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=1.0A; IR=2.0A; IRR=0.5A

20

nS

 Junction Capacitance

CJ

at 25°C; VR=4.0V; f=1MHz

11

pF

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 SMB