DEVICE INTRODUCTION:

 Device Name

 Surface Mounted Silicon Carbide Ultra Fast Recovery High Voltage Rectifier Diode

 Device Type

 SC04US02(C04)

 Simple Data

 400mA  2.0kV   20nS

 Substitute Type

 C04

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 0.02 gram (approx)

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Maximum Repetitive Reverse Voltage

VRRM

TA=25°C

2000

V

 Max.Working Peak Reverse Voltage

VRWM

TA=25°C

2000

V

 Max.DC Blocking Voltage

VDC

TA=25°C

2000

V

 RMS Reverse Voltage

VRMS

TA=25°C

1400

V

 Maximum Average Forward Current  

IFAVM

TC=75°C

400

mA

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Half-Sine Wave; 8.3mS

20

A

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Square Wave; 1.0mS

24

A

 Maximum Junction Temperature

TJ

175

°C

 Allowable Operation Case Temperature

TC

-55~+175

°C

 Storage Temperature

TSTG

-65~+200

°C

 Current Squared Time 

I2t

1.0mS ≤ t ≤ 8.3mS

10.375

A2s

 Thermal Resistance from Junction (To Lead)

Rth(J-L)

Mounted on P.C.B. with 8mm*8mm copper pad areas.

20

°C/W

 Thermal Resistance from Junction (To Ambient)

Rth(J-A)

Mounted on P.C.B. with 8mm*8mm copper pad areas.

75

°C/W

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

1.7

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

0.5

uA

 Maximum Reverse Current

IR2

at 125°C; at VRRM

20

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=200mA; IR=-400mA; IRR=-100mA

20

nS

 Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

2.9

pF

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 SOD-123FL