DEVICEDATASHEET

 DEVICE INTRODUCTION:

 Device Name

 High Voltage Silicon Rectifier Diode

 Device Type

 ESJC30-12     (250mA  10.8kV  150nS)

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT

 Net Weight

 2.10 gram (approx)

 

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltage

VRRM

TA=25°C

10800

V

 Non-Repetitive Peak Renerse Voltage

VRSM

TA=25°C

12000

V

 Average Forward Current Maximum

IFANM

TA=110°C; Resistive Load

250

mA

 Average Forward Current Maximum

IFAVM

TOIL=110°C

--

mA

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 50Hz Half-Sine Wave; 8.3mS

15

A

 Junction Temperature

TJ

 

125

°C

 Allowable Operation Case Temperature

TC

 

-40~+125

°C

 Storage Temperature

TSTG

 

-40~+150

°C

 

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

24

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

10

uA

 Maximum Reverse Current

IR2

at 100°C; at VRRM

100

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

150

nS

 Reverse Breakdown Voltage

VAV

at 25°C; IR=100uA

≥12

kV

 

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-721

 

Pre:GH05U08J
Next:BR8F
About us
Company ProfileEnterprise IdeaContact usProductive Facilit
Product category
High Voltage DiodeHV Silicon RectifiHV Rectifier BridgHV Rectifier ModulHV Silicon Rectifi
Information
Quick FindTechnical DataHVGT NewsDimensions of Outl
Contact us
E-Mail: sales@getedz.com
Address: Room 221~223, B#, No. 9, Huaxi Road, Liwan District, Guangzhou City, Guangdong Province, China. 510380