| DEVICEDATASHEET |
|
DEVICE INTRODUCTION: |
|
|
Device Name |
High Voltage Microwave Oven Rectifiers Diodes |
|
Device Type |
|
|
Simple Data |
|
|
Substitute Type |
|
|
Environmental Protection |
RoHS / SGS |
|
Manufacturer |
HVGT Semiconductor |
|
Net Weight |
2.50 gram (approx) |
|
MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings) |
||||
|
Items |
Symbols |
Condition |
Data Value |
Units |
|
Repetitive Peak Renerse Voltag |
VRRM |
|
12 |
kV |
|
Average Forward Current |
IFAVM |
60Hz Half-Sine Wave, Resistance Load, Ta=60°C |
450 |
mA |
|
Non-Repetitive Forward Surge Current |
IFSM |
60Hz Half-Sine Wave; 8.3mS; 1Cycle |
30 |
A |
|
Reverse surge current |
IRSM |
Wp=1ms, Rectangular-Wave, One-Shot |
100 |
mA |
|
Junction Temperature |
TJ |
|
130 |
°C |
|
Allowable Operation Case Temperature |
TC |
|
-40~+130 |
°C |
|
Storage Temperature |
TSTG |
|
-40~+130 |
°C |
|
ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless Otherwise Specified) |
||||
|
Items |
Symbols |
Condition |
Data value |
Units |
|
Maximum Forward Voltage Drop |
VFM |
at 25°C; at IFAVM |
10 |
V |
|
Maximum Reverse Current |
IR1 |
at 25°C;at VRRM |
5.0 |
uA |
|
Maximum Reverse Current |
IR2 |
at 100°C;at VRRM |
50 |
uA |
|
Maximum Reverse Recovery Time |
TRR |
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR |
-- |
nS |
|
Reverse Breakdown Voltage |
VZ |
at 25°C; IR=100uA |
12.5 |
kV |
|
PACKAGE SIZE:(Unit:mm) |
|
|
HVGT Name: |
|
|
|
|
