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DEVICE INTRODUCTION: |
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Device Name |
High Temperature High Voltage Silicon Rectifier Diode |
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Device Type |
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Basic Parameter |
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Application |
For working automobile electronics equipment. |
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Environmental Protection |
RoHS / SGS |
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Manufacturer |
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Net Weight |
0.26 gram (approx) |
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MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) |
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Items |
Symbols |
Condition |
Data Value |
Units |
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Repetitive Peak Renerse Voltage |
VRRM |
@TA=25°C |
4.0 |
kV |
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Non-Repetitive Peak Renerse Voltage |
VRSM |
@TA=25°C |
5.0 |
kV |
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Average Maximum Forward Current |
IFAVM |
@TA=50°C; 50Hz Half-Sine Wave |
50 |
mA |
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Non-Repetitive Forward Surge Current |
IFSM |
@TA=25°C; 50Hz Half-Sine Wave; 8.3mS |
3.0 |
A |
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Junction Temperature |
TJ |
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180 |
°C |
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Allowable Operation Case Temperature |
TC |
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-40~+125 |
°C |
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Storage Temperature |
TSTG |
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-55~+175 |
°C |
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ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified) |
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Items |
Symbols |
Condition |
Data value |
Units |
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Maximum Forward Voltage Drop |
VF |
at 25°C; at IF(AV) |
5.0 |
V |
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Maximum Reverse Current |
IR1 |
at 25°C; at VRRM |
2.0 |
uA |
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Maximum Reverse Current |
IR2 |
at 175°C; at VRRM |
25 |
uA |
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Maximum Reverse Recovery Time |
TRR |
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR |
-- |
nS |
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Junction Capacitance |
CJ |
at 25°C; VR=0V; f=1MHz |
-- |
pF |
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PACKAGE SIZE:(Unit:mm) |
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HVGT Name: |
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