DEVICE INTRODUCTION:

 Device Name

 Ultra-Fast Recovery High Voltage Silicon Rectifying Diode

 Device Type

 1N6517

 Simple Data

 1.0A   5.0kV   70nS

 Substitute Type

 --

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 2.10 gram (approx)

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltag

VRRM

TA=25°C

5.0

kV

 Average Forward Current Maximum

IFAVM

TA=55°C

1.0

A

 Average Forward Current Maximum

IFAVM

TL=100°C (L=0.375")

0.5

A

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Half-Sine Wave; 8.3mS

30

A

 Repetitive Forward Surge Current

IFRM

TA=25°C

8.0

A

 Junction Temperature

TJ

150

°C

 Allowable Operation Case Temperature

TC

-55~+150

°C

 Storage Temperature

TSTG

-55~+175

°C

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

8.0

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

1.0

uA

 Maximum Reverse Current

IR2

at 100°C; at VRRM

25

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

70

nS

 Junction Capacitance

CJ

at 25°C; VR=40VDC; f=1KHz

16

pF

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-590