DEVICEDATASHEET

 DEVICE INTRODUCTION:

 Device Name

 High Current High Voltage Silicon Rectifier Diodes

 Device Type

 ESJW02

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT

 Net Weight

 2.55 gram (approx)

 

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltag

VRRM

TA=25°C

2.0

kV

 Non-Repetitive Peak Renerse Voltage 

VRSM

TA=25°C

--

kV

 Average Forward Current Maximum

IFAVM

TA=55°C

4.5

A

 Average Forward Current Maximum

IFAVM

TOIL=55°C

--

A

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 50Hz Half-Sine Wave; 8.3mS

90

A

 Junction Temperature

TJ

 

150

°C

 Allowable Operation Case Temperature

TC

 

-40~+150

°C

 Storage Temperature

TSTG

 

-40~+150

°C

 

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

2.4

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

2.0

uA

 Maximum Reverse Current

IR2

at 100°C; at VRRM

10

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

150

nS

 Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

--

pF

 

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-722

 

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