DEVICE INTRODUCTION:

 Device Name

 High Voltege Diode

 Device Type

 ESJC13-12B

 Simple Data

 350mA   12kV   --nS

 Substitute Type

 CL01-12    2CL3512     HVM12-350 

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 2.60 gram (approx)

 MAXIMUM RATINGS AND CHARACTERISTICS: Ta=25°C (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltag

VRRM

12

kV

 Average Forward Current Maximum

IFAVM

60Hz Half-Sine Wave, Resistance Load, Ta=60°C

350

mA

 Non-Repetitive Forward Surge Current

IFSM

60Hz Half-Sine Wave; 8.3mS; 1Cycle

30

A

 Reverse surge current 

IRSM

Wp=1ms, Rectangular-Wave, One-Shot

100

mA

 Junction Temperature

TJ

130

°C

 Allowable Operation Case Temperature

TC

-40~+130

°C

 Storage Temperature

TSTG

-40~+130

°C

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless Otherwise Specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

10

V

 Maximum Reverse Current

IR1

at 25°C;at VRRM

5.0

uA

 Maximum Reverse Current

IR2

at 100°C;at VRRM

50

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

--

nS

 Reverse Breakdown Voltage

VZ

at 25°C; IR=100uA

12.5

kV

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-722B