DEVICE INTRODUCTION:

 Device Name

 High Voltage Silicon Diodes for Micro-wave

 Device Type

 2CL105

 Simple Data

 450mA   9.0kV   --nS

 Substitute Type

 HVM09-450      2CL4509    ESJC13-09

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 2.10 gram (approx)

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Maximum Repetitive Peak Renerse Voltag

VRRM

TA=25°C

9.0

kV

 Maximum Non-Repetitive Peak Renerse Voltage 

VRSM

TA=25°C

10.8

kV

 Maximum Average Forward Current 

IFAVM

60Hz Half-Sine Wave, Resistance Load, TA=60°C

450

mA

 Maximum Non-Repetitive Forward Surge Current

IFSM

60Hz Half-Sine Wave; 8.3mS; 1Cycle

30

A

 Maximum Reverse Surge Current

IRSM

Wp=1ms, Rectangular-Wave, One-Shot

100

mA

 Junction Temperature

TJ

150

°C

 Allowable Operation Case Temperature

TC

-40~+150

°C

 Storage Temperature

TSTG

-55~+175

°C

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless Otherwise Specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at IFAVM

9.0

V

 Maximum Reverse Current

IR1

at 25°C;at VRRM

2.0

uA

 Maximum Reverse Current

IR2

at 100°C;at VRRM

50

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

--

nS

 Max. Avalanche Breakdown Voltage 

VBR

at 25°C; IR=100uA

9.5

kV

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-721