DEVICEDATASHEET

 DEVICE INTRODUCTION:

 Device Name

 Fast Recovery High Voltage Diodes

 Device Type

 ESJC37-08

 Simple Data

 Toil=55°C: 400mA;   8.0kV;   100nS

 Substitute Type

 HV37-08

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 0.65 gram (approx)

 

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltag

VRRM

TA=25°C

8.0

kV

 Non-Repetitive Peak Renerse Voltage 

VRSM

TA=25°C

--

kV

 Average Forward Current Maximum

IFAVM

TA=40°C

210

mA

 Average Forward Current Maximum

IFAVM

TOIL=55°C

400

mA

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Half-Sine Wave; 8.3mS

15

A

 Junction Temperature

TJ

 

125

°C

 Allowable Operation Case Temperature

TC

 

-40~+125

°C

 Storage Temperature

TSTG

 

-40~+150

°C

 

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at 100mA

18

V

 Maximum Reverse Current

IR1

at 25°C; at VRRM

2.0

uA

 Maximum Reverse Current

IR2

at 100°C; at VRRM

10

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

100

nS

 Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

7.4

pF

 

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-415

 

Pre:ESJC37-10
Next:HVRL400
About us
Company ProfileEnterprise IdeaContact usProductive Facilit
Product category
High Voltage DiodeHV Rectifier AssemHV Rectifier BridgSMT HV DiodePCB HV AssemblySiC HV Devices
Information
Quick FindTechnical DataHVGT NewsDimensions of Outl
Contact us
E-Mail: sales@getedz.com
Address: Room 221~223, B#, No. 9, Huaxi Road, Liwan District, Guangzhou City, Guangdong Province, China. 510380