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DEVICE INTRODUCTION: |
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Device Name |
Ultra-Fast Recovery High Voltage Silicon Rectifying Diode |
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Device Type |
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Simple Data |
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Substitute Type |
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Environmental Protection |
RoHS / SGS |
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Manufacturer |
HVGT Semiconductor |
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Net Weight |
2.60 gram (approx) |
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MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) |
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Items |
Symbols |
Condition |
Data Value |
Units |
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Repetitive Peak Renerse Voltag |
VRRM |
TA=25°C |
20 |
kV |
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Non-Repetitive Peak Renerse Voltage |
VRSM |
TA=25°C |
24 |
kV |
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Average Forward Current Maximum |
IFAVM |
TA=55°C |
250 |
mA |
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Average Forward Current Maximum |
IFAVM |
TOIL=55°C |
450 |
mA |
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Non-Repetitive Forward Surge Current |
IFSM |
TA=25°C; 60Hz Half-Sine Wave; 8.3mS |
30 |
A |
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Junction Temperature |
TJ |
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150 |
°C |
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Allowable Operation Case Temperature |
TC |
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-40~+150 |
°C |
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Storage Temperature |
TSTG |
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-55~+175 |
°C |
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ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified) |
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Items |
Symbols |
Condition |
Data value |
Units |
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Maximum Forward Voltage Drop |
VFM |
at 25°C; at IFAVM |
28.8 |
V |
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Maximum Reverse Current |
IR1 |
at Ta=25°C; at VRRM |
0.5 |
uA |
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Maximum Reverse Current |
IR2 |
at Toil=100°C; at VRRM |
20 |
uA |
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Maximum Reverse Recovery Time |
TRR |
at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR |
40 |
nS |
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Junction Capacitance |
CJ |
at 25°C; VR=0VDC; f=1KHz |
4.1 |
pF |
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PACKAGE SIZE:(Unit:mm) |
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HVGT Name: |
HVM-S |
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