DEVICE INTRODUCTION:

 Device Name

 Fast Recovery Silicon High Voltage Diode

 Device Type

 GT20G20G

 Simple Data

 200mA   20kV    100nS

 Substitute Type

 HV37-20

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 0.65 gram (approx)

 MAXIMUM RATINGS AND CHARACTERISTICS:  (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

 Repetitive Peak Renerse Voltag

VRRM

TA=25°C

20

kV

 Non-Repetitive Peak Renerse Voltage 

VRSM

TA=25°C

24

kV

 Average Forward Current Maximum

IFAVM

TA=55°C

200

mA

 Average Forward Current Maximum

IFAVM

TOIL=55°C

480

mA

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 60Hz Half-Sine Wave; 8.3mS

30

A

 Junction Temperature

TJ

150

°C

 Allowable Operation Case Temperature

TC

-40~+150

°C

 Storage Temperature

TSTG

-55~+175

°C

 ELECTRICAL CHARACTERISTICS:  Ta=25°C  (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VFM

at 25°C; at 200mA

35

V

 Maximum Reverse Current

IR1

at TA=25°C; at VRRM

1.0

uA

 Maximum Reverse Current

IR2

at TOIL=100°C; at VRRM

20

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=100mA; IR= -00mA; IRR= -50mA

100

nS

 Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

3.0

pF

 Thermal Resistance (In OIL)

RTH(J-O)

On Glass-epoxy Board, In Oil

30

°C/W

 Thermal Resistance (In Air)

RTH(J-A)

On Glass-epoxy Board, In Air

70

°C/W

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 DO-415