DEVICEDATASHEET

 DEVICE INTRODUCTION:

 Device Name

 Half Bridge High Voltage Rectifier Assembly

 Device Type

 HBG020D101D

 Simple Data

 2.0A   2x100KV   --NS

 Substitute Type

 --

 Environmental Protection

 RoHS  /  SGS

 Manufacturer

 HVGT Semiconductor

 Net Weight

 1200 gram (approx)

 

 MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data value

Units

 Repetitive Peak Renerse Voltage

VRRM

TA=25°C; IR=1.0uA

100

100

kV

 Peak Working Revere Voltage

VRWM

TA=25°C; IR=1.0uA

100

100

kV

 Non-Repetitive Peak Renerse Voltage

VRSM

TA=25°C; IR=1.0uA

120

120

kV

 Average Forward Current Maximum

IFAVM

 TA=50°C; 50Hz Half-sine Wave; Resistance load 

2.0

A

 Non-Repetitive Forward Surge Current

IFSM

TA=25°C; 50Hz Half-Sine Wave; 8.3mS

60

A

 Junction Temperature

TJ

 

150

°C

 Allowable Operation Case Temperature

Tc

 

-40~+150

°C

 Storage Temperature

TSTG

 

-40~+150

°C

 

 ELECTRICAL CHARACTERISTICS: Ta=25°C (Unless otherwise specified)

Items

Symbols

Condition

Data value

Units

 Maximum Forward Voltage Drop

VF

at 25°C; IF=IFAVM

125

125

V

 Maximum Reverse Current

IR1

at 25°C; VR=VRRM

5.0

5.0

uA

 Maximum Reverse Current

IR2

at 100°C; VR=VRRM

50

50

uA

 Maximum Reverse Recovery Time

TRR

at 25°C; IF=0.5IR; IR=IFAVM; IRR=0.25IR

--

--

nS

 Junction Capacitance

CJ

at 25°C; VR=0V; f=1MHz

 --

 --

pF

 

 PACKAGE SIZE:(Unit:mm)

HVGT Name:

 HVD-350

 

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